Bulk non-radiative recombination reduction in nGaAs due to an annealing under Ga-Al melt
✍ Scribed by Professor V. M. Andreev; O. K. Salieva; V. A. Solov'ev; Dr. O. V. Sulima; A. M. Khammedov
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 327 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
It is shown by microcathodoluminescence and electron beam induced current investigations that efficiency of radiative recombination and the values of hole diffusion lengths in nGaAs substrate increase (up t o L, -5 pm) due to an annealing under Ga-A1 melt. The values of the annealing critical temperature exceeding of which leeds t o bulk non-radiative recombination drop as well as optimal values of annealing temperature and duration are determined.
In pA1GaAs-(p-n)GaAs solar cells based on annealed substrates the values of open
circuit voltage U,, = 1.16 -1.18 V under 500-fold concentrated solar radiation as well as values of photocurrent comparable with the best results of solar cells with epitaxial nGaAs are achieved.