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Radiative moderation of an electron beam by a silicon crystal

✍ Scribed by A.M. Frolov; K.I. Gubrienko; V.A. Maisheev; A.I. Mysnik; S.B. Nurushev; V.L. Solovianov

Publisher
Elsevier Science
Year
1983
Weight
372 KB
Volume
216
Category
Article
ISSN
0167-5087

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The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.