Radiative lifetime of free excitons in quantum wells
β Scribed by Lucio Claudio Andreani; Francesco Tassone; Franco Bassani
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 357 KB
- Volume
- 77
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
A theory of intrinsic radiative lifetimes of excitons in semiconductor quantum dots is presented. Simple closed-form expressions for the decay times are obtained for quantum dots fabricated from quasi-two-dimensional systems. In particular, the intrinsic temperature-dependent photoluminescence decay
We have investigated the exciton radiative lifetime in \(\mathrm{GaAs}\) quantum dots fabricated by metal organic chemical vapor selective growth technique. The radiative lifetime \(\tau_{\mathrm{r}}\) can be obtained from the results of photoluminescence(PL) and timeresolved PL measurements. At low
Time-integrated and time-resolved photoluminescence of Cd 0.3 Zn 0.7 S 0.06 Se 0.94 / ZnS 0.06 Se 0.94 single quantum wells (QW) have been studied. The radiative recombination process is dominated by localized excitons which have a constant lifetime of βΌ300 ps when the temperature is less than 130 K