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Radiation resistance of compound semiconductor solar cells

โœ Scribed by Yamaguchi, Masafumi


Book ID
118045972
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
850 KB
Volume
78
Category
Article
ISSN
0021-8979

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Proton irradiation-based degradation characteristics for molecular beam epitaxy (MBE) grown Ga 0ร51 In 0ร49 P/GaAs single-junction tandem solar cells of n/p con-ยฎguration are reported. The cells were irradiated with 3-MeV protons up to ยฏuences of 10 13 cm 72 . The cells were characterized with curre