Radiation-Enhanced Oxygen Precipitation in Neutron-Transmutation-Doped Floating-Zone Silicon
β Scribed by Meng, Xiang-Ti
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 246 KB
- Volume
- 129
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The effect of rapid thermal process (RTP) on the oxygen precipitation and on the denuded zone (DZ) formation in nitrogen-doped Czochralski (NCZ) silicon wafers has been investigated. The DZ can be formed at the surface of NCZ wafers subjected to RTP annealing. However, the oxygen precipitation and b
## Abstract The formation of an oxygen precipitate denuded zone in nitrogenβdoped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit