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Radiation effects on the adhesion of NaCl to SiO2

✍ Scribed by C.J. Sofield; P.N. Trehan; S. Sugden


Book ID
113278633
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
319 KB
Volume
24-25
Category
Article
ISSN
0168-583X

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Radiation effect on the photoluminescenc
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Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)