Radiation Effects in Advanced Semiconductor Materials and Devices

✍ Scribed by Prof. Cor Claeys, Dr. Eddy Simoen (auth.)

• Publisher: Springer-Verlag Berlin Heidelberg
• Year: 2002
• Tongue: English
• Leaves: 424
• Series: Springer Series in Materials Science 57
• Edition: 1
• Category: Library

✦ Synopsis

In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.

✦ Table of Contents

Front Matter....Pages I-XXII
Radiation Environments and Component Selection Strategy....Pages 1-8
Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices....Pages 9-52
Displacement Damage in Group IV Semiconductor Materials....Pages 53-108
Radiation Damage in GaAs....Pages 109-144
Space Radiation Aspects of Silicon Bipolar Technologies....Pages 145-180
Radiation Damage in Silicon MOS Devices....Pages 181-244
GaAs Based Field Effect Transistors for Radiation-Hard Applications....Pages 245-280
Opto-Electronic Components for Space....Pages 281-330
Advanced Semiconductor Materials and Devices—Outlook....Pages 331-350
Back Matter....Pages 351-404

✦ Subjects

Crystallography; Characterization and Evaluation of Materials; Optical and Electronic Materials; Surfaces and Interfaces, Thin Films; Electronics and Microelectronics, Instrumentation