𝔖 Bobbio Scriptorium
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Radiation damage in InSb by alpha particle implantation

✍ Scribed by B.J.E. Van Tonder; E. Friedland

Book ID
113279071
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
562 KB
Volume
35
Category
Article
ISSN
0168-583X

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The electronic characteristics of narrow-gap III-V semiconductor InSb make this material play an important role in infrared detectors. In this material, p-n junctions are currently achieved by light Be-ion implantation to reduce the implantation-induced damage. But the hazardous character of berylli