Radiation damage formation in InP, InSb, GaAs, GaP, Ge, and Si due to fast ions

✍ Scribed by Kamarou, A.; Wesch, W.; Wendler, E.; Undisz, A.; Rettenmayr, M.

• Book ID: 121291198
• Publisher: The American Physical Society
• Year: 2008
• Tongue: English
• Weight: 874 KB
• Volume: 78
• Category: Article
• ISSN: 1098-0121
• DOI: 10.1103/PhysRevB.78.054111