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Quenching of the luminescence of ZnS:Mn at high excitation levels

✍ Scribed by I. K. Vereshchagin; V. I. Kezik; A. V. Pautkina

Publisher
Springer US
Year
1991
Tongue
English
Weight
157 KB
Volume
55
Category
Article
ISSN
0021-9037

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πŸ“œ SIMILAR VOLUMES

Quenching of donor-acceptor pair radiati
Quenching of donor-acceptor pair radiation at high excitation level
✍ Dr. A. Zehe; Dr. G. RΓΆpke πŸ“‚ Article πŸ“… 1975 πŸ› John Wiley and Sons 🌐 English βš– 100 KB

## Quenching of Donor-Acceptor Pair Radiation at High Bxcitation Level It is well known from experimental work (MAEDA; THOMAS, GERSHENZEN, HOPFIELD) that saturation of the donor-acceptor pair (DAP) recombination channel in suitable doped semiconductors at sufficiently high excitation level occurs.