✦ LIBER ✦
Quenching of donor-acceptor pair radiation at high excitation level
✍ Scribed by Dr. A. Zehe; Dr. G. Röpke
- Publisher
- John Wiley and Sons
- Year
- 1975
- Tongue
- English
- Weight
- 100 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
✦ Synopsis
Quenching of Donor-Acceptor Pair Radiation at High Bxcitation Level
It is well known from experimental work (MAEDA; THOMAS, GERSHENZEN, HOPFIELD) that saturation of the donor-acceptor pair (DAP) recombination channel in suitable doped semiconductors at sufficiently high excitation level occurs. A t very strong excitation of a highly doped and compensated (Ga, AI)As layer, however, a quenching of the DAP recombination intensity has been observed (ZEHE, H m E L ) .
As reason for this behaviour several mechanisms can be considered. In this note