Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

✍ Scribed by A.N. Nazarov; I.N. Osiyuk; J.M. Sun; R.A. Yankov; W. Skorupa; I.P. Tyagulskii; V.S. Lysenko; S. Prucnal; T. Gebel; L. Rebohle

• Publisher: Springer
• Year: 2006
• Tongue: English
• Weight: 270 KB
• Volume: 87
• Category: Article
• ISSN: 0721-7269
• DOI: 10.1007/s00340-006-2534-1