Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method

✍ Scribed by U. Reislöhner; S. Deubler; P. Dohlus; D. Forkel; J. Meier; H. Plank; H. Wolf; W. Witthuhn; G. Pensl

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 292 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90221-3