Quasi-two-dimensional simulation of an i
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M. Madheswaran; V. Rajamani; P. Chakrabarti
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Article
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2000
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John Wiley and Sons
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English
β 216 KB
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A quasi-two-dimensional numerical model of an optically ( ) gated GaAs metal semiconductor field-effect transistor MESFET has been de¨eloped for the characterization of the de¨ice as a photodetector. The model considers the channel to be nonuniformly doped. The model in¨ol¨es the solution of a 1-D P