✦ LIBER ✦

Quasi-three-level Nd:LuVO4 laser under diode pumping directly into the emitting level

✍ Scribed by Y.F. Lü; J. Xia; X.H. Zhang

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 157 KB
Volume: 7
Category: Article
ISSN: 1612-2011
DOI: 10.1002/lapl.200910119

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✦ Synopsis

We describe the output performances of the 916 nm 4 F 3/2 → 4 I 9/2 transition in Nd:LuVO4 under in-band pumping with diode laser at the 880 nm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:LuVO 4 crystal yielded 11.7 W of continuous-wave output power for 23.5 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 66.6%. Furthermore, 5.9 W 458 nm deep-blue light was acquired by frequency doubling, resulting in an opticalto-optical efficiency with respect to the absorbed pump power of 25.1%. Comparative results obtained for the pump with diode laser at 809 nm, into the highly-absorbing 4 F 5/2 level, are given in order to prove the advantages of the in-band pumping.

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