We describe the output performances of the 916 nm 4 F 3/2 β 4 I 9/2 transition in Nd:LuVO4 under in-band pumping with diode laser at the 880 nm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:LuVO 4 crystal yielded 11.7 W of continuous-wave output power for 23.5 W of absorbed
Quasi-three-level Nd:GdVO4 laser under diode pumping directly into the emitting level
β Scribed by X. Yu; K. Zhang; J. Gao; F. Chen; X.D. Li; R.P. Yan; J.H. Yu; Y.Z. Wang
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 94 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1612-2011
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β¦ Synopsis
We present experimental investigation on quasi-threelevel operation of Nd:GdVO4 laser under 879 nm laser diode pumping into the emitting level. By using a 5-mm-long, 0.2-at.% bulk crystal, the maximal 3.65 W continuous wave 912 nm laser is obtained under 16.5 W pump power. The slope efficiency is 35.9% and the optical conversion efficiency is 22.1% with respect to the absorbed pump power. The beam quality factor is about 1.83 for 3.0 W output power at 912 nm. The good results demonstrate that the 879 nm direct pumping can also be used in the quasi-three-level systems. Output power at 912 nm, W 0.5 0 1.5 1.0 2.5 2.0 3.5 3.0 4.
π SIMILAR VOLUMES
We report the efficient blue laser at 473 nm generation by intracavity frequency doubling of a continuous wave laser operation of a 885 nm diode direct pumped Nd:YAG laser on the 4 F 3/2 β 4 I 9/2 transition at 946 nm. A LiB 3 O 5 (LBO) crystal, cut for critical type I phase matching at room tempera
We report a high-efficiency Nd:LuVO 4 laser operating at 1066 and 1343 nm, respectively, direct pumped by a diode laser at 880 nm. The maximum outputs of 10.5 and 7.0 W, at 1066 and 1343 nm, respectively, are obtained in a 8mm-thick 0.4 at.% Nd:LuVO4 crystal with 16.9 W of absorbed pump power at 880