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Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure

✍ Scribed by S.E. Laux; D.J. Frank; Frank Stern

Book ID
118362416
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
378 KB
Volume
196
Category
Article
ISSN
0039-6028

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Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs heterostructure, using a recently developed shallow mesa etch technique. Four terminal high field magnetoresistance measurements at temperatures down to 2 K have been performed on samples with etched