✦ LIBER ✦

Quasi-gas transition layers occurring in MBE growth of microdevices and superlattices

✍ Scribed by Marian A. Herman

Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 304 KB
Volume: 2
Category: Article
ISSN: 0749-6036
DOI: 10.1016/0749-6036(86)90045-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Are in-growth surface reactions during M

Are in-growth surface reactions during MBE controlled by a “Quasi-Gas transition layer”?

✍ B. Wolf; Prof. Dr. Dr. A. Zehe 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 451 KB

The Problem of a Near Surface Quasi-Gas

The Problem of a Near Surface Quasi-Gas Transition Layer in MBE

✍ Dr. M. A. Herman 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 453 KB

Growth and characterization of In0.53Ga0

Growth and characterization of In0.53Ga0.47As/InxGa1−xAs strained-layer superlattices

✍ A. Kohl; S. Juillaguet; B. Fraisse; R. Schwedler; F. Royo; H. Peyre; F. Bruggema 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 408 KB

Since the early proposal that InGaAs/lnGaAs strained-layer superlattices (SLSs) should constitute a new class of optoelectronic materials, very little work has been done to master the growth conditions and optimize the resulting superlattice properties. In this work, we present the results of a prel