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Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

โœ Scribed by Riedl, C. (author);Coletti, C. (author);Iwasaki, T. (author);Zakharov, A. A. (author);Starke, U. (author)

Book ID
121491852
Publisher
The American Physical Society
Year
2009
Tongue
English
Weight
897 KB
Volume
103
Category
Article
ISSN
0031-9007

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Quasi-Free-Standing Epitaxial Graphene o
Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
โœ Riedl, C. (author);Coletti, C. (author);Iwasaki, T. (author);Zakharov, A. A. (au ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› The American Physical Society ๐ŸŒ English โš– 897 KB

Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the รฐ6 ffiffiffi 3 p ร‚ 6 ffiffiffi 3 p รžR30 reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this b