Quantum yield of p–i–n photodiodes
✍ Scribed by Li, S. S. ;Lindholm, F. A.
- Book ID
- 105368052
- Publisher
- John Wiley and Sons
- Year
- 1973
- Tongue
- English
- Weight
- 443 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
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The response of a p-i-n photodetector made from gallium arsenide to both steady-state and transient illumination has been modelled. Both an ensemble Monte-Carlo model and a drift-diffusion model were used, the latter with the choice of two different mobility models. The effects of high intensity ste
## Abstract This article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitr