Quantum Transport with Band-Structure and Schottky Contacts
β Scribed by R. Lake; G. Klimeck; R. C. Bowen; D. Jovanovic; D. Blanks; M. Swaminathan
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 185 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
Band structure calculations are performed on narrow InGaAs/InP quantum wells (QWs) including gradual interface effects. Within the confines of the envelope approximation, the transfer matrix method is used, with adaptation to multi-band models. A comparison is made for two structures with fundamenta
An InGaN/GaN multiple quantum well structure grown by low pressure MOCVD on c-Al 2 O 3 substrate is investigated using spectral-time-resolved cathodoluminescence microscopy (CL). At 6 K the laterally integrated CL spectrum shows a very efficient blue emission from the InGaN multiple quantum well cen