AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400 °C

✍ Scribed by Hilsenbeck, J. ;Rieger, W. ;Nebauer, E. ;John, W. ;Tränkle, G. ;Würfl, J. ;Ramakrishan, A. ;Obloh, H.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 158 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<183::aid-pssa183>3.0.co;2-m