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Quantum transport in double-gate MOSFETs with complex band structure

โœ Scribed by Tongsheng Xia; Register, L.F.; Banerjee, S.K.

Book ID
114617114
Publisher
IEEE
Year
2003
Tongue
English
Weight
371 KB
Volume
50
Category
Article
ISSN
0018-9383

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The formulation and calculation of quantum electron transport in double-gate metal oxide semi-conductor field effect transistors (DGMOSFETs) is presented based on multiband non-equilibrium Green's function (NEGF) formalism. In the formulation we employ the empirical sp 3 s รƒ tight-binding approximat