Quantum Statistics of Ionization and Shielding Effects in Non-Degenerate Moderately Doped Semiconductors

✍ Scribed by W. Ebeling

• Publisher: John Wiley and Sons
• Year: 1971
• Tongue: English
• Weight: 709 KB
• Volume: 46
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220460122

✦ Synopsis

Abstract

In the framework of the hydrogen plasma model the semiconductor is considered as a system of donors and electrons in a uniform medium. A recently developed quantum‐statistical theory of hydrogen plasmas in thermal equilibrium is applied to this simple model; the lowering of the activation energy is calculated exactly up to the order O(n) where n is the electron density. Especially the influence of shielding effects on the activation energy is studied. A method for the treatment of partly compensated semiconductors is proposed. Explicit results are given for the degree of ionization in n‐type Ge as a function of the donor concentration and the temperatures. The limits of the stability region with respect to ambipolar diffusion are diseussed.