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Quantum Hall effect apparatus and its prospects as a resistance standard

✍ Scribed by V. M. Pudalov; S. G. Semenchinskii; I. Ya. Krasnopolin

Book ID
104980758
Publisher
Springer US
Year
1988
Tongue
English
Weight
409 KB
Volume
31
Category
Article
ISSN
0543-1972

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## Abstract We investigate two features of the transverse resistance __R~xy~__ in a Si‐MOSFET in the quantum Hall effect regime. The first, the β€œovershoot” phenomenon, is observed at filling factor Ξ½ = 3. In this case, when the magnetic field increases and the filling factor Ξ½ approaches Ξ½ = 3, __R