We report the results of low-temperature electroreflectance (ER) and photoluminescence (PL) investigations on thin n-type modulation-doped GaAs/AlGaAs single quantum well structures. The density of the two-dimensional electron gas (2DEG) is varied continuously from zero to \(\mathrm{N}_{\mathrm{s}}
โฆ LIBER โฆ
Quantum efficiency of GaAs/AlGaAs thin films with
โ Scribed by X. Xu; T. Yamada; A. Otomo
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 293 KB
- Volume
- 93
- Category
- Article
- ISSN
- 0721-7269
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