Interdiffusion phenomena in InGaAs/GaAs
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B. SarΔ±kavak; M. K. ΓztΓΌrk; T. S. Mammadov; S. ΓzΓ§elik
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Article
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2010
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John Wiley and Sons
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English
β 264 KB
## Abstract We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution Xβray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temper