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Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

✍ Scribed by Osamu Makino; Koichi Nakamura; Akitomo Tachibana; Hiroki Tokunaga; Nakao Akutsu; Koh Matsumoto

Book ID
104309145
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
201 KB
Volume
159-160
Category
Article
ISSN
0169-4332

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✦ Synopsis

Ε½

. Ε½ . The mechanism of parasitic reactions among trimethylaluminum TMA , trimethylgallium TMG , and NH in 3 Ε½ . atmospheric pressure AP MOVPE for growth of AlGaN is theoretically studied using the quantum chemical method. The calculations show that metal-nitrogen chain growth reaction easily proceeds through the successive reactions of 'complex formation with NH ' and 'CH elimination by the bimolecular mechanism'. Additionally, a parasitic reaction in APMOVPE 3 4

using other raw material is also investigated. The calculated result shows that small change of raw material raises activation energy of parasitic reaction, and, thus, the parasitic reaction is suppressed. This result suggests a way to improve APMOVPE by a suitable choice of substituent.

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