Quantized hall effect in single quantum wells of InAs
β Scribed by E.E. Mendez; L.L. Chang; C.-A. Chang; L.F. Alexander; L. Esaki
- Book ID
- 118985448
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 300 KB
- Volume
- 142
- Category
- Article
- ISSN
- 0039-6028
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Applying orthogonal in-plane electric and magnetic fields in a 2D system leads to the development of a Hall voltage across the width of the quantum well when the cyclotron orbit is greater than the well width. Tang and Butcher [1] have calculated the developed Hall voltage for a parabolic quantum we
Far infrared magneto-optical measurements have been performed on a series of InAs single quantum wells (11-30 nm) clad with thick GaSb layers where either GaAs-like or InSb-like bonds are formed at the heterointerfaces. The rich absorption spectra are found to have both 'interband' and 'intraband' (