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Quantitative mobility spectrum analysis of AlGaN/GaN heterostructures using variable-field hall measurements

โœ Scribed by Biyikli, N.; Xie, J.; Moon, Y.-T.; Yun, F.; Stefanita, C.-G.; Bandyopadhyay, S.; Morkoc, H.; Vurgaftman, I.; Meyer, J. R.


Book ID
111689075
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
306 KB
Volume
88
Category
Article
ISSN
0003-6951

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In this work, we present results of a study of anisotropic two-dimensional electron gas (2DEG) transport in N-polar GaN/AlGaN heterostructures grown on slightly mis-oriented sapphire substrates. High-resolution mobility spectrum analysis of magnetic-field dependent Hall-effect and resistivity indica