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Quantification of trap densities at dielectric/III–V semiconductor interfaces

✍ Scribed by Engel-Herbert, Roman; Hwang, Yoontae; Stemmer, Susanne


Book ID
118234721
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
832 KB
Volume
97
Category
Article
ISSN
0003-6951

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In this study, the interface trap density of metal-oxide-semiconductor (MOS) devices with Pr 2 O 3 gate dielectric deposited on Si is determined by using a conductance method. In order to determine the exact value of the interface trap density, the series resistance is estimated directly from the im