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Quadrupole interactions of fluorine at implantation sites in germanium and silicon

โœ Scribed by K. Bonde Nielsen; T. Lauritsen; G. Weyer; H. K. Schou; P. T. Nielsen


Book ID
112705113
Publisher
Springer
Year
1983
Tongue
English
Weight
184 KB
Volume
15
Category
Article
ISSN
0304-3843

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We have studied, by means of B diffusion analyses, the effect of F on the point defect density in preamorphized Si. Through molecular beam epitaxy (MBE) Si samples containing a special B multi-spike were grown. These samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen te