Schottky diodes may be realized by various techniques, depending on application and processing technology. M/A-COM has recently developed an enhancement/depletion (E/D) pHEMT process, used primarily for control circuits around its mature RF circuitry. We report here a reliability study of two diodes
Pulsed stress reliability investigations of schottky diodes and HBTS
✍ Scribed by M. Schüβler; V. Krozer; K.H. Bock; M. Brandt; L. Vecci; R. Losi; H.L. Hartnagel
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 305 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0026-2714
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
MEH-PPV (poly[2-methoxy-5-(2 0 -ethyl-hexyloxy)-1,4-phenylene vinylene]) based Schottky diodes have been fabricated and investigated through the analyses of current density-voltage and capacitance-voltage characteristics. Temperature-dependent hole mobility of MEH-PPV is extracted by the space-charg
## Abstract The paper concerns the problem of SPICE modeling of the merged pin Schottky (MPS) diodes. In the paper, the SPICE electrothermal model (ETM) of the SiC MPS diodes proposed by Infineon Technologies is investigated. The model was verified experimentally by comparing the calculated and the