Pulsed laser deposition of aluminum-doped ZnO films at 355
β Scribed by E. Holmelund; J. Schou; B. Thestrup; S. Tougaard; E. Johnson; M.M. Nielsen
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 153 KB
- Volume
- 79
- Category
- Article
- ISSN
- 1432-0630
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## Abstract InAs coβdoped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using Xβray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to invest
## Abstract Sn:ZnO thin films with different Sn concentrations were grown by pulsed laser deposition (PLD) onto singleβcrystal Si(001) substrates at an oxygen pressure of 2 Γ 10^β2^ mbar and substrate temperature of 600 Β°C. The targets used were high density Sn:ZnO pellets with different Sn concent