Pulsed laser action of Pr:GdLiF4at room temperature
β Scribed by T. Danger; T. Sandrock; E. Heumann; G. Huber; B. Chai
- Publisher
- Springer
- Year
- 1993
- Tongue
- English
- Weight
- 266 KB
- Volume
- 57
- Category
- Article
- ISSN
- 0721-7269
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π SIMILAR VOLUMES
A room-temperature diode-end-pumped acoustooptical (AO) Q-switched Tm:GdVO4 laser was firstly reported. The minimum AO Q-switch pulse width was measured to be about 48 ns with output power of 2 W and repetition rate of 5 kHz. Continuous-wave output power of 2.8 W at 1912 nm was obtained under the ab
Undoped ZnO, Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films were deposited on silica glass substrate at room temperature in a vacuum by KrF excimer laser (Ξ» = 248 nm) pulsed laser deposition method. The transparency of ZnO thin films showed the dependence on deposition area. The relationship b