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PtSi/n-type Si Schottky barrier height change by H+ ion implantation near the interface region

โœ Scribed by P. Hadizad; A.S. Yapsir; T.-M. Lu; J.C. Corelli; A. Sugerman


Book ID
114168102
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
254 KB
Volume
19-20
Category
Article
ISSN
0168-583X

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## ลฝ . Change in Schottky barrier height SBH of TirSi surface damaged by CHF rO plasma treatment was investigated as a 3 2 function of annealing temperature. SBH of the damaged interface was initially higher than that of clean interface. The SBH of damaged interface increased with increasing the a