Pseudopotential method for calculating the eutectic temperature and concentration of the components of the B4C–TiB2, TiB2–SiC, and B4C–SiC systems
✍ Scribed by D. A. Zakaryan; V. V. Kartuzov; A. V. Khachatryan
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 242 KB
- Volume
- 48
- Category
- Article
- ISSN
- 1573-9066
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B 4 C-SiC-Si-TiB 2 composites were synthesized by a two step process. TiB 2 particles in the size range 2-5 m were generated in situ in the first step and were distributed in the residual silicon present in the reaction bonded boron carbide, in the second step. The composites were characterized by X
Thermal decomposition of AlN-SiC(-TiB 2 ) systems during densification was analyzed, and effects of B, B 4 C and C on the densification behavior of the systems were studied. SiO 2 impurity in the powder mixture was nearly completely removed by carbothermal reaction at 1500 • C in vacuum, while Al 2