Processing and characterization of B4C–SiC–Si–TiB2 composites

✍ Scribed by Manish Patel; J. Subrahmanyam; V.V. Bhanu Prasad; Rajnish Goyal

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 720 KB
• Volume: 527
• Category: Article
• ISSN: 0921-5093
• DOI: 10.1016/j.msea.2010.03.020

✦ Synopsis

B 4 C-SiC-Si-TiB 2 composites were synthesized by a two step process. TiB 2 particles in the size range 2-5 m were generated in situ in the first step and were distributed in the residual silicon present in the reaction bonded boron carbide, in the second step. The composites were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electron probe micro analysis (EPMA) and micro-hardness testing. The density and average hardness of siliconized boron carbide samples with and without TiB 2 particle reinforcement were found to be 2.67 g/cm 3 and 25 GPa and 2.54 g/cm 3 and 21 GPa, respectively.