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Proton-induced increase of the penetration depth in a Tl2Ba2Ca1Cu2Ox microstrip resonator

✍ Scribed by E.M. Jackson; B.D. Weaver; G.P. Summers

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
427 KB
Volume
206
Category
Article
ISSN
0921-4534

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✦ Synopsis

A microstrip resonator made from two TlzBa2CatCu2Ox films separated by a LaAIO3 dielectric has been irradiated with 2 MeV protons in fluence increments up to 10 t7 protons/cm 2. Measurements of the temperature-and fluence-dependence of the resonant frequency are analyzed in order to determine changes in the microwave penetration depth. The temperature dependence of the penetration depth exhibits Josephson-like behavior. The penetration depth increases almost linearly with fluence, from about 0.8 prn to about 2.3 ttm. The increase is attributed to a decrease in the Josepson critical current density.

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