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Proton diffusion in crystalline silicon

✍ Scribed by Buda, F.; Chiarotti, Guido L.; Car, R.; Parrinello, M.


Book ID
124074449
Publisher
The American Physical Society
Year
1989
Tongue
English
Weight
170 KB
Volume
63
Category
Article
ISSN
0031-9007

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The model for the interacting diffusion of two dopants in silicon is analysed in the limit of high peak concentration of one dopant. Several distinct regions of dopant behaviour are identified, in each of which the governing equations are significantly simpler than the full problem. Of particular pr