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Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

✍ Scribed by Lukashin, V. M.; Pashkovskii, A. B.; Zhuravlev, K. S.; Toropov, A. I.; Lapin, V. G.; Golant, E. I.; Kapralova, A. A.

No coin nor oath required. For personal study only.

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