Property improvement of Cu–Zr alloy films with ruthenium addition for Cu metallization

✍ Scribed by Ying Wang; Fei Cao; Mi-lin Zhang; Tao Zhang

• Book ID: 103999171
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 798 KB
• Volume: 59
• Category: Article
• ISSN: 1359-6454
• DOI: 10.1016/j.actamat.2010.09.053

✦ Synopsis

Films of Cu-Ru-Zr and Cu-Zr were deposited on SiO 2 /Si substrates by magnetron sputtering. Samples were subsequently annealed at temperatures of up to 500 °C for 1 h and analyzed by four-point probe measurement, X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The XRD data suggest that the Cu film has a preferential (1 1 1) crystal orientation. According to the TEM results the grain size of the alloy Cu film is smaller than that of a pure Cu film. XPS indicates that a ZrO x layer has formed at the Cu alloy/SiO 2 interface and that its thickness in the annealed Cu-Ru-Zr/ SiO 2 /Si sample becomes larger due to Ru incorporation. After annealing the resistivity values of the annealed Cu alloy films are a little higher than that of annealed pure Cu film. These results indicate that Cu-Ru-Zr films are suitable for advanced barrier-free metallization from the view of interfacial stability and low resistivity.