Ultrahigh-vacuum dual-target reactive magnetron sputtering, in a mixed Ar/N 2 discharge was used to deposit epitaxial single-crystal MAX phase Ti 2 AlN(0 0 0 1) thin films, without seed layers, onto Al 2 O 3 (0 0 0 1) substrates kept at 1050 Β°C. By varying the N 2 partial pressure a narrow process w
β¦ LIBER β¦
Properties of ZrNx films with x > 1 deposited by reactive radiofrequency magnetron sputtering
β Scribed by A. Rizzo; M.A. Signore; L. Mirenghi; E. Serra
- Book ID
- 108289368
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 515 KB
- Volume
- 515
- Category
- Article
- ISSN
- 0040-6090
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