Properties of Yb-doped scintillators: YAG, YAP, LuAG
β Scribed by S Belogurov; G Bressi; G Carugno; Yu Grishkin
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 356 KB
- Volume
- 516
- Category
- Article
- ISSN
- 0168-9002
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Lu 3 Al 5 O 12 (LuAG) films were grown from the BaO-B 2 O 3 -BaF 2 flux on LuAG and YAG substrates using the liquid phase epitaxy method (LPE). They were doped with Pr 3 + , Sc 3 + , and eventually still with Ce 3 + ions. Photoelectron yield, its time dependence, and energy resolution were measured
Pr 3 + 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micropulling down (m-PD) method. Pr 3 + 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The m-PD grown crystals s
Thin YAG (Y~3~Al~5~O~12~) and YAP (YAlO~3~) films doped with Er content were grown by sub-picosecond (450 fs) KrF laser deposition from crystalline Er: YAG and Er: YAP laser rods. The influence of laser power density, substrate temperature, target- substrate distance and deposition ambient atmospher