Growth and scintillation properties of Pr doped YAP with different Pr concentrations
โ Scribed by Takayuki Yanagida; Kei Kamada; Yutaka Fujimoto; Makoto Sugiyama; Yuki Furuya; Akihiro Yamaji; Yuui Yokota; Akira Yoshikawa
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 380 KB
- Volume
- 623
- Category
- Article
- ISSN
- 0168-9002
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โฆ Synopsis
Pr 3 + 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micropulling down (m-PD) method. Pr 3 + 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The m-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under 137 Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400 7 2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr 3 + 5d-4f transition.
๐ SIMILAR VOLUMES
This paper deals with Pr-doped and Pr, Si-codoped YAlO 3 single crystal growth by the micro-pulling-down method and investigation of their spectroscopic and scintillating properties. The Pr 3+ 5d-4f radioluminescence intensity is more than 10 times higher than that of Bi 4 Ge 3 O 12 standard sample,
Lu 3 Al 5 O 12 (LuAG) films were grown from the BaO-B 2 O 3 -BaF 2 flux on LuAG and YAG substrates using the liquid phase epitaxy method (LPE). They were doped with Pr 3 + , Sc 3 + , and eventually still with Ce 3 + ions. Photoelectron yield, its time dependence, and energy resolution were measured