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Properties of WNx/GaAs Schottky contacts prepared by ion implantation of nitrogen

✍ Scribed by T. Lalinsky; J. Kuzmík; D. Gregušová; Ž. Mozolová; J. Breza; M. Feciško; P. Seidl

Publisher
Springer US
Year
1992
Tongue
English
Weight
435 KB
Volume
3
Category
Article
ISSN
0957-4522

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