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Properties of thermally diffused V3Si multilayer films

โœ Scribed by S De Stefano; A Di Chiara; G Peluso; L Maritato; A Saggese; R Vaglio


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
248 KB
Volume
25
Category
Article
ISSN
0011-2275

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โœฆ Synopsis


The procedure used to produce htgh qualily V3Si superconducling hlms ts descrtbed. Resulls are reporled Ior hires oblained by Ihermal anneahng under vacuum ol a lew vanadium and sil,con layers sequenl,ally deposiled by eleclron-bearn evaporalion. 'Resislwe' crtltcal lemperalures up Io 16.2 K wilh very sharp Iransitton widlh (AT,~ ,.... 0.1 K) are observed. The critical lemperalure as a lunclton ol Ihe anneal,ng lemperalure preparalion parameler and normal slale parameters (larlice conslanl, resislance ralio) are shown. Finally Ihe lemperalure dependence of the normal slale res,slwily ,s discussed m Ihe Iramework ol a phenomenological 'shunl-resislor model'.


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## Abstract Results of experimental researches of electrophysical properties of Multilayer film systems Ni/V, and Cr/Fe which was formed on the basis of nanocrystals (V, Cr and Fe) and high dispersed Ni films are presented. It is carried out comparisons of experimental and calculated on the basis r