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Properties of shallow-levelD−-centers in polar semiconductors

✍ Scribed by N. I. Kashirina; V. D. Lakhno; V. V. Sychev; M. K. Sheinkman

Book ID
110133899
Publisher
Springer
Year
2003
Tongue
English
Weight
60 KB
Volume
37
Category
Article
ISSN
1063-7826

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Topological interaction of shallow impurities with dislocations is studied. This problem is related with the violation of the topological structure of the crystal lattice by dislocations. The interaction results in a topological gauge field that is confined inside the dislocation cores but influence