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Properties of red light emitting (Al, Ga)As double heterostructure diodes

✍ Scribed by Grummt, G. ;Haefner, H. ;Oelgart, G. ;Thielemann, W. ;Pickenhain, R. ;Jacobs, B.

Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
645 KB
Volume
107
Category
Article
ISSN
0031-8965

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Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence