Properties of pulsed laser deposited vanadium oxide thin film thermistor

✍ Scribed by R.T.Rajendra kumar; B. Karunagaran; D. Mangalaraj; Sa.K. Narayandass; P. Manoravi; M. Joseph

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 190 KB
• Volume: 6
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2003.08.023

✦ Synopsis

Vanadium oxide thin film has been deposited on glass substrate at room temperature using pulsed laser deposition with the laser fluence of 1.4 J/cm 2 under high vacuum. X-ray photoelectron spectroscopy analysis shows that the film is oxygen deficient compared to the stoichiometric V 2 O 5 . X-ray diffraction study reveals the amorphous nature of the film. Atomic force microscopy ensures the particulate free film with smooth surface topography. From the temperaturedependent resistance measurements, thermistor parameters such as temperature coefficient of resistance (a) and thermistor constant (B) were determined as 28000 ppm K À1 and 2623 K, respectively.